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N02M083WL1AD中文资料

厂家型号

N02M083WL1AD

文件大小

212.47Kbytes

页面数量

9

功能描述

2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

数据手册

下载地址一下载地址二

生产厂商

NANOAMP

N02M083WL1AD数据手册规格书PDF详情

Overview

The N02M083WL1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device comprises a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for

medical users.

Features

• Single Wide Power Supply Range 2.3 to 3.6 Volts

• Low standby current 3µA maximum at 3.6V

• Very low operating current 2 mA at 3.6V and 1Mhz (Typical)

• Very low Page Mode operating current 0.5mA at 3.6V and 1Mhz (Typical)

• Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion

• Low voltage data retention Vcc = 1.8V

• Automatic power down to standby mode

• TTL compatible three-state output driver

N02M083WL1AD产品属性

  • 类型

    描述

  • 型号

    N02M083WL1AD

  • 制造商

    NANOAMP

  • 制造商全称

    NANOAMP

  • 功能描述

    2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit

更新时间:2025-10-7 15:08:00
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