HE (High-function Economy) Type 1- Channel (Form B) Type

FEATURES

1. Form B (Normally-closed) type

Has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.

2. Controls low-level analog signals

PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.

3. High sensitivity, low ON resistance

Can control a maximum 0.15 A load current with a 5 mA input current. Low ON resistance of 16 Ω (AQV454). Stable operation because there are no metallic contact parts.

4. Controls various types of load such as relays, motors, lamps and solenoids.

5. Eliminates the need for a power supply to drive the power MOSFET

A power supply used to drive the power MOSFET is unnecessary because of the built-in optoelectronic device. This results in easy circuit design and small PC board area.

6. Low thermal electromotive force (Approx. 1 µV) (Basic insulation)

7. Reinforced insulation 5,000 V type also available.

More than 0.4 mm .016 inch internal insulation distance between inputs and outputs. Conforms to IEC950 (reinforced insulation).

TYPICAL APPLICATIONS

• Security equipment

• High-speed inspection machines

• Measuring instruments

• Telephone equipment

• Sensors