Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

The NXH003P120M3F2PTNG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with Si3N4 DBC in an F2 package. Features • 3 m / 1200 V M3S SiC MOSFET Half−Bridge • Si3N4 DBC • Thermistor • Pre−Applied Thermal Interface Material (TIM) • Press−Fit Pins • These

Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC

The NXH003P120M3F2PTHG is a power module containing 3 m / 1200 V SiC MOSFET half−bridge and a thermistor with HPS DBC in an F2 package. Features • 3 m / 1200 V M3S SiC MOSFET Half−Bridge • HPS DBC • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−