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NX8价格
参考价格:¥165.7930
型号:NX8 品牌:HELLERMANN 备注:这里有NX8多少钱,2024年最近7天走势,今日出价,今日竞价,NX8批发/采购报价,NX8行情走势销售排行榜,NX8报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SURFACE MOUNT TYPE CRYSTAL UNITS [NDK] ThesesurfacemountcrystalunitsareideallysuitedforclocksignalgeneratingsourcesforCPUsforpowertrainsandsafetycontroldevicesrequiringextremelyhighreliabilityasanelectronicpartusedinacar. Thiscrystalunitcanmeetrequirementstartingfromalowfrequency5MHz. | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
Crystal Units For OA / AV ■Features Asmallsurface-mounttypecrystalunit,idealforAutomotive. CompatiblewithanenginecontrolCPUclockdeliveringthehighreliabilitythatisparticularlydemanded. ●Stablestart-upcharacteristicevenunderextremelysevereenvironmentalconditions. ●Excellentenvironmental | NDK NDK | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s DESCRIPTION TheNX8300BE-CCandNX8300CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s DESCRIPTION TheNX8300BE-CCandNX8300CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Mb/s DESCRIPTION TheNX8303BG-CCandNX8303CG-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmodulewithsinglemodefiber. ThesemodulesareidealasalightsourceforSyn | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Mb/s DESCRIPTION TheNX8303BG-CCandNX8303CG-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmodulewithsinglemodefiber. ThesemodulesareidealasalightsourceforSyn | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFORFIBEROPTICCOMMUNICATIONS DESCRIPTION TheNX8304BE-CCandNX8304CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thismoduleisasal | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFORFIBEROPTICCOMMUNICATIONS DESCRIPTION TheNX8304BE-CCandNX8304CE-CCare1310nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thismoduleisasal | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmFORLONGHAUL2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8313UDisa1310nmMultipleQuantumWell(MQW)structured DistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly) withInGaAsmonitorPIN-PDinareceptacletypepackage designedforS | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION TheNX8315XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION TheNX8316XCisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFF/SFPtransceiverwithLCduplexreceptacle. FEATURES •Internalop | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmMQW-DFBLASERDIODEMODULEWITHDRIVER FOR10Gb/sAPPLICATIONS DESCRIPTION TheNX8340MD-CCisa1310nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodemodulewithaninternal driverIC.Itiscapableoftransmittingupto12kmstandardsinglemode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310nmAlGaInAsMQW-DFBLASERDIODE FOR10Gb/sAPPLICATION FEATURES •Internalopticalisolator •OpticaloutputpowerPf=−2dBm •Lowthresholdcurrentlth=8mATYP.@TC=25°C •WideoperatingtemperaturerangeTC=−5to+85°C •InGaAsmonitorPIN-PD | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8346TBandNX8346TYare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolat | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internaloptical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION DESCRIPTION TheNX8350TSisa1271to1331nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSAs(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinanLCreceptacletypepackagedesignedforCFPtransceiver. FEATURES •Internalopticalisolator | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8369TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION TheNX8369TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES •Internalopticalisolator •Optical | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION DESCRIPTION TheNX7660JCisa1625nmnewlydevelopedStrainedMultipleQuantumWell(St-MQW)structurelaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesoftelemetryequipment. FEATURES •OutputpowerPf=5mWMIN.@IF=65mA | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR156Mb/s,622Mb/s DESCRIPTION TheNX8503BG-CCandNX8503CG-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithsinglemodefiber. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR156Mb/s,622Mb/s DESCRIPTION TheNX8503BG-CCandNX8503CG-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithsinglemodefiber. Thesemodulesareidealasalightsour | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Gb/s DESCRIPTION TheNX8504BE-CCandNX8504CE-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsou | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1550nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR622Gb/s DESCRIPTION TheNX8504BE-CCandNX8504CE-CCare1550nmMultipleQuantumWell(MQW)structuredDistributedFeed- Back(DFB)laserdiodecoaxialmoduleswithaninternalopticalisolator. Thesemodulesareidealasalightsou | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmInGaAsPMQW-DFBLASERDIODE COAXIALMODULEFOR2.5Gb/s,CWDM DESCRIPTION TheNX8508Seriesisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodecoaxialmodulewithan internalopticalisolator. Thesedevicesareidealfor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
LASER DIODE 1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
NX8产品属性
- 类型
描述
- 型号
NX8
- 制造商
HellermannTyton
- 功能描述
P CLIP BLACK 15.8MM PK100
- 制造商
HellermannTyton
- 功能描述
P CLIP, BLACK, 15.8MM, PK100
- 制造商
HellermannTyton
- 功能描述
P CLIP, BLACK, 15.8MM, PK100, Clip
- Style
P Clip, Clip
- Diameter
15.8mm, Mounting Hole
- Dia
4mm, Thread Size -
- Imperial
-, Thread Size -
- Metric
-,
- SVHC
No SVHC(19-Dec-2012),
- Colour
Black, External
- Length/Height
32mm, External
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NDK |
21+ |
SMD |
10000 |
全新原装 公司现货 价格优 |
|||
NDK |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
NDK |
2021+ |
N/A |
6800 |
只有原装正品 |
|||
NDK |
6000 |
面议 |
19 |
SMD |
|||
NDK |
21+ |
SMD |
2857 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NDK |
23+ |
NA/ |
8250 |
原厂直销,现货供应,账期支持! |
|||
NDK |
23+ |
SMD |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
NIHON |
2023+ |
SMD |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NIHON |
1950+ |
SMD |
4856 |
只做原装正品现货!或订货假一赔十! |
|||
NDK |
23+ |
SMD |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
NX8规格书下载地址
NX8参数引脚图相关
- pcb技术
- PCB材料
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- OEM
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- NX9548
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- NX8501
- NX8341
- NX8045GB-8M-LN>
- NX8045GB-8.000M-STD-CSJ-1
- NX8045GB-8.000000MHZ
- NX8045GB-7.5MHZ-STD-CSF-4
- NX8045GB-7.3728MHZ-STD-CSF-3
- NX8045GB-6MHZ-STD-CSF-3
- NX8045GB-5MHZ-STD-CSF-3
- NX8045GB-40.000000MHZ
- NX8045GB-30.000000MHZ
- NX8045GB-27.000000MHZ
- NX8045GB-25.000000MHZ
- NX8045GB-24.000000MHZ
- NX8045GB-20.000000MHZ
- NX8045GB19.660>
- NX8045GB-18.432000MHZ
- NX8045GB-16.934400MHZ
- NX8045GB-14.318180MHZ
- NX8045GB-13.560000MHZ
- NX8045GB-12.288000MHZ
- NX8045GB-10.000000MHZ
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- NX7535
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- NX7526
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- NX73SA
- NX7338BF-AA-AZ
- NX7335
- NX72SB
- NX72SA
- NX71SB
- NX71SA
- NX7102IDETR
- NX7102
- NX7021E0125.000000
- NX7012D0025.001875
- NX7011E0091.500000
- NX7011E0059.000000
- NX7011D0104.000000
- NX7011D0070.656000
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- NX7002BKR
- NX7002AKW,115
- NX7002AKS,115
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- NX7002AK,215
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- NX60T-25SAA-SH(50)
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- NX5-RM7A
- NX5-PRVM5B-C5
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焕盛达-专注原装真芯服务;当天下单,当天发货;
2020-8-13
DdatasheetPDF页码索引
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