LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH). FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 8 mA • Diff

1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

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High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

400 MHz - 4 GHz Low Noise Amplifier

GENERAL DESCRIPTION The ADL5521 is a high performance GaAs pHEMT low-noise amplifier. It provides high gain and low noise figure for single down-conversion IF sampling receiver architectures as well as direct down conversion receivers. The ADL5521 amplifier comes in a compact, thermally enhanced

High Current Chokes

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Instrument Knobs

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High Current Chokes

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