NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS

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1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：285.22 Kbytes Page：7 Pages

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：285.22 Kbytes Page：7 Pages

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS

文件：347.56 Kbytes Page：5 Pages

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：285.22 Kbytes Page：7 Pages

NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s APPLICATIONS

文件：347.56 Kbytes Page：5 Pages

1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE

文件：285.22 Kbytes Page：7 Pages

2.5 V to 5.5 V, 230 uA Dual Rail-to-Rail, Voltage Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5302/AD5312/AD5322 are dual 8-, 10-, and 12-bit buffered voltage output DACs in a 10-lead MSOP that operate from a single 2.5 V to 5.5 V supply, consuming 230 μA at 3 V. Their on-chip output amplifiers allow the outputs to swing rail to-rail with a slew rate of 0.7 V/μs.

Single Phase Bridge Rectifier 8 Amp

Features: ● Low Forward Voltage Drop ● Surge Overload Rating: 200A (Peak) ● Mounting Hole Thru for #6 Screw

SONET/SDH Transport Overhead Terminating Transceiver

FEATURES • Monolithic SONET/SDH Transport Overhead Terminating Transceiver for use in STS-1, STS-3 (STM-1), or STS-12 (STM-4) line interface applications. • Operates in one of four modes: STS-1 bit serial mode, STS-1 byte serial mode, STS-3/STM-1 byte serial mode, or STS-12/STM-4 byte se

Multi LDOs for Cellular-phone?

APPLICATIONS ● Portable Phones such as GSM, PDC and CDMA as well as other analog phones. ● power supply for battery-powered appliances.

SONET/SDH TRANSPORT TERMINATING TRANSCEIVER

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