20 V, 2 A P-channel Trench MOSFET

1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSF

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel Mosfet

Application ® Load/Power Switching ® Interfacing Switching ® Logic Level Shift

20 V, 2 A P-channel Trench MOSFET

20 V, 2 A P-channel Trench MOSFET

文件：370.25 Kbytes Page：16 Pages

20 V, 2 A P-channel Trench MOSFET

文件：318.47 Kbytes Page：3 Pages

Vibrating level switch

The device Type 8110 is a filling level switch for liquids, using a tuning fork as the sensor element. It is designed for industrial use in all areas of process technology and can be used in liquids. Typical applications are overflow or run-dry protection. The small tuning fork (40 mm in lengt

1.5 Watt - 20 Volts, Class C Microwave 2300 MHz

GENERAL DESCRIPTION The 2301 is a COMMON BASE transistor capable of providing 1.5 Watts Class C, RF output power at 2300 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed

SOT-23 Plastic-Encapsulate MOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20V P-CHANNEL MOSFET

文件：111.41 Kbytes Page：4 Pages

10V P-Channel Enhanced MOS FET

文件：171.02 Kbytes Page：3 Pages