MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

60 N-Channel Enhancement Mode Power MOSFET

文件：1.2749 Mbytes Page：5 Pages

MOSFET - Power, Single N-Channel 60 V, 9.8 m, 51 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

OptiMOSTM Power-Transistor, 60 V

文件：1.09827 Mbytes Page：11 Pages