MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single, N-Channel, 40 V, 12 mΩ, 38 A

MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 9.5 m, 43 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 12 m, 38 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single, N-Channel

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.64568 Mbytes Page：14 Pages

OptiMOSTM5 Power-Transistor, 40V

文件：1.14375 Mbytes Page：12 Pages

OptiMOSTM Power-MOSFET, 40 V

文件：1.62813 Mbytes Page：13 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages