MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

文件：208.86 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

文件：208.95 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

文件：208.95 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

文件：208.86 Kbytes Page：7 Pages