型号 功能描述 生产厂家 企业 LOGO 操作
NVTFS6H854N

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

NVTFS6H854N

单 N 沟道,功率 MOSFET,80V,48A,14.5mΩ

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H854NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

文件:208.86 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

文件:208.95 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 13.4 m, 41 A

文件:208.95 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 14.5 m, 48 A

文件:208.86 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
三年内
1983
只做原装正品
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
onsemi(安森美)
24+
DFN-8(3x3)
8850
支持大陆交货,美金交易。原装现货库存。
ON(安森美)
24+
标准封装
8000
原装,正品
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
ON(安森美)
24+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
24+
N/A
18000
原装正品现货支持实单
ONSEMI
2025+
55740
NK/南科功率
2025+
DFN3333-8
986966
国产

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