Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件：204.03 Kbytes Page：7 Pages

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件：192.78 Kbytes Page：7 Pages

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件：192.78 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件：204.03 Kbytes Page：7 Pages