型号 功能描述 生产厂家&企业 LOGO 操作
NVTFS6H850N

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件:204.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件:192.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件:192.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件:204.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2025-8-14 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ON
1941+
WDFN8
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
三年内
1983
只做原装正品
ON
23+
DFN-8
6850
只做原装正品假一赔十为客户做到零风险!!
ON(安森美)
25+
标准封装
8000
原装,请咨询
ON(安森美)
24+
标准封装
8000
原装,正品
ON(安森美)
23+
25900
新到现货,只有原装
ON Semiconductor
21+
8-WDFN(3.3x3.3)
1500
进口原装!长期供应!绝对优势价格(诚信经营)!!
ON
25+
WDFN8
3000
原厂原装,价格优势
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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