型号 功能描述 生产厂家 企业 LOGO 操作
NVTFS6H850N

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

NVTFS6H850N

单 N 沟道,功率 MOSFET,80V,68A,9.5mΩ

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H850NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件:204.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件:192.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 8.6 m, 64 A, Single N?묬hannel

文件:192.78 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 80 V, 9.5 m, 68 A

文件:204.03 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2025-10-29 16:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
WDFN-8
9000
原装正品,支持实单!
ON
23+
DFN-8
18000
正规渠道,只有原装!
ON
23+
DFN-8
6850
只做原装正品假一赔十为客户做到零风险!!
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
ON(安森美)
23+
25900
新到现货,只有原装
ON(安森美)
24+
标准封装
8000
原厂原装,价格优势,欢迎洽谈!
onsemi(安森美)
24+
DFN-8(3x3)
8850
支持大陆交货,美金交易。原装现货库存。
ON
24+
DFN
15000
原装原标原盒 给价就出 全网最低
ON
25+
WDFN8
3000
原厂原装,价格优势
ON(安森美)
23+
WDFN-8
13728
公司只做原装正品,假一赔十

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