Power MOSFET 40 V, 6.7 m, 40 A, Single N?묬hannel Small Footprint

MOSFET – Power, Single N-Channel 40 V, 6.7 m, 40 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS5811NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Dev

Power MOSFET

文件：126.57 Kbytes Page：6 Pages

包装：卷带（TR） 描述：MOSFET N-CH 40V 40A 8WDFN 分立半导体产品 晶体管 - FET，MOSFET - 单个

BiMOS II 12-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS

Designed primarily for use with vacuum-fluorescent displays, the UCN5811A smart power BiMOS II driver features low-output saturation voltages and high output switching speed. These devices contain CMOS shift registers, data latches, and control circuitry, and bipolar high-speed sourcing outputs wi

VM-1 Application Board 3

文件：409.69 Kbytes Page：11 Pages

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier

文件：672.48 Kbytes Page：28 Pages

High IP3, 700 MHz to 2800 MHz, Double Balanced, Passive Mixer, IF Amplifier, and Wideband LO Amplifier

文件：672.48 Kbytes Page：28 Pages

60V, LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER

文件：432.99 Kbytes Page：14 Pages