MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET – Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS3 Power Transistor

Features • MOSFET for ORing and Uninterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Logic level • Ultra-low on-resistance RDS(on) • 100 Avalanche tested • pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

OptiMOS3 Power-Transistor

Features • MOSFET for ORing and Uniterruptible Power Supply • Qualified according to JEDEC1) for target applications • N-channel • Normal level • Ultra-low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

Power MOSFET 40 V, 12 m, 35 A, Single N?묬hannel

文件：322.88 Kbytes Page：7 Pages

Power MOSFET 40 V, 12 m, 35 A, Single N?묬hannel

文件：322.88 Kbytes Page：7 Pages