MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 10.3 m, 38 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages

Metal Oxide Semiconductor Field Effect Transistor

文件：1.64568 Mbytes Page：14 Pages

OptiMOSTM5 Power-Transistor, 40V

文件：1.14375 Mbytes Page：12 Pages

OptiMOSTM Power-MOSFET, 40 V

文件：1.62813 Mbytes Page：13 Pages

New OptiMOS??40V and 60V

文件：1.02174 Mbytes Page：2 Pages