MOSFET – Power, Single N-Channel, STD Gate, SO8FL 40 V, 3.1 m, 94 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

Single N-Channel Power MOSFET 40 V, 94 A, 3.1mΩ

MOSFET – Power, Single N-Channel, STD Gate, SO8FL 40 V, 3.1 m, 94 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel 40 V, 2.8 m, 110 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

MOSFET ??Power, Single, N-Channel 40 V, 2.8 m, 110 A

文件：341.32 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 2.8 m, 110 A

文件：341.32 Kbytes Page：7 Pages