MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 m, 273 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m, 310 A

文件：347.61 Kbytes Page：7 Pages

MOSFET - Power, Single N-Channel, DUAL COOL, DFN8 5x6 40 V, 0.85 m, 313 A

文件：387.61 Kbytes Page：7 Pages

MOSFET ??Power, Single N-Channel 40 V, 0.81 m, 342 A

文件：372.14 Kbytes Page：7 Pages

MOSFET ??Power, Single, N-Channel 40 V, 0.82 m, 330 A

文件：362.25 Kbytes Page：7 Pages