MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

单 N 沟道，功率 MOSFET，60V，67A，7.2mΩ

MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET ??Power, Single N-Channel 60 V, 7.2 m, 67 A

NVMFS5H663NLWF − Wettable Flank Option for Enhanced Optical Inspection. Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

MOSFET – Power, Single, N-Channel 60 V, 7.2 m, 61 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant