MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

MOSFET - Power, Single, N-Channel100 V, 5.1 mΩ, 108A

MOSFET ??Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWS005N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

MOSFET – Power, Single N-Channel 100 V, 5.1 m, 108 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

MOSFET ??Power, Single N-Channel

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