MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

包装：卷带（TR）卷带（TR） 描述：T6 60V S08FL DUAL 分立半导体产品 晶体管 - FET，MOSFET - 阵列