Silicon Carbide (SiC) MOSFET – 32 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100% Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Complia

Silicon Carbide (SiC) MOSFET – EliteSiC, 31mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

Silicon Carbide (SiC) MOSFET – 31 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 31 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 168 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

Silicon Carbide (SiC) MOSFET - 33 mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 33 m @ VGS = 18 V Typ. RDS(on) = 45 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • Low Effective Output Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

Silicon Carbide SiC MOSFET - 32 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 32 m @ VGS = 18 V Typ. RDS(on) = 42 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 105 nC) • High Speed Switching with Low Capacitance (Coss = 162 pF) • 100 Avalanche Tested • TJ

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 31 m, 62 A

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