Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：268.6 Kbytes Page：8 Pages

Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (typ. QG(tot) = 196 nC) • Low Effective Output Capacitance (typ. Coss = 296 pF) • 100 UIL Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant wit

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 200 nC) • Low Effective Output Capacitance (Coss = 295 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second lev

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 900 V, 20 m, 112 A

文件：335.19 Kbytes Page：8 Pages

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：264.75 Kbytes Page：8 Pages

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：264.75 Kbytes Page：8 Pages