isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET 100 V, 19 A, 74 m

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N 沟道，功率 MOSFET，100V，19A，74mΩ

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m

文件：122.14 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

16Kbit Serial CMOS EEPROM

General Description The AK6416A is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416A has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416A can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416A is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416A has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416A can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416C is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416C has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416C can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416C is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416C has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416C can operate full function under wide operating voltage

CUSTOMER PRODUCT SPECIFICATION

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