isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 98A@ TC=25℃ ·Drain Source Voltage -VDSS= 60 V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60 V, 5.7 m, 98 A, Single N-Channel

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N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 50A RDS(ON)

Power MOSFET

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N-Channel MOSFET uses advanced SGT technology

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Power MOSFET

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MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features • DC / DC converter applications. • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. • [MOSFET] • 2.5V drive. • [SBD] • Sho

SEMICONDUCTORS

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SEMICONDUCTORS

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ANALOG SWITCH ICS FOR RGB INTERFACE

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ANALOG SWITCH ICS FOR RGB INTERFACE

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