Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A

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Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exem

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

Silicon Carbide (SiC) MOSFET – 12 mohm, 650V, M2, D2PAK-7L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (o

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on sec

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 m, 145 A

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