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NTZD3155C价格
参考价格：￥0.5256
型号：NTZD3155CT1G 品牌：ON 备注：这里有NTZD3155C多少钱，2025年最近7天走势，今日出价，今日竞价，NTZD3155C批发/采购报价，NTZD3155C行情走势销售排行榜，NTZD3155C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NTZD3155C | Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA Features • Leading Trench Technology for Low RDS(on) Performance • High Efficiency System Performance • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These Devices are Pb−F | ONSEMI 安森美半导体 |   | |
NTZD3155C | Small Signal MOSFET 文件：91.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
NTZD3155C | Complementary Small Signal MOSFET with ESD protection 20V | ONSEMI 安森美半导体 | | |
Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA Features • Leading Trench Technology for Low RDS(on) Performance • High Efficiency System Performance • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These Devices are Pb−F | ONSEMI 安森美半导体 | | ||
N- and P-Channel 20 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | ||
Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA Features • Leading Trench Technology for Low RDS(on) Performance • High Efficiency System Performance • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These Devices are Pb−F | ONSEMI 安森美半导体 | | ||
Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA Features • Leading Trench Technology for Low RDS(on) Performance • High Efficiency System Performance • Low Threshold Voltage • ESD Protected Gate • Small Footprint 1.6 x 1.6 mm • These Devices are Pb−F | ONSEMI 安森美半导体 | | ||
Small Signal MOSFET 文件：91.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Small Signal MOSFET 文件：91.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Small Signal MOSFET 文件：91.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Small Signal MOSFET 文件：91.74 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
FLAT WASHERS NYLON FIBRE [KEYSTONE] NYLON RETAINING WASHERS FLAT WASHERS – NYLON & FIBRE INTERNAL TOOTH WASHERS STEEL LOCK WASHERS STEEL FLAT WASHERS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
16 MHz Bandpass F 文件：104.68 Kbytes Page：3 Pages | KR | | ||
WASHERS 文件：68.27 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Vent Plugs and Thick Panel Vent Plugs 文件：111.26 Kbytes Page：1 Pages | Heyco | | ||
OPTICS CATALOGUE 文件：3.71457 Mbytes Page：24 Pages | COIL | |
NTZD3155C产品属性
- 类型
描述
- 型号
NTZD3155C
- 功能描述
MOSFET 20V 540mA/-430mA Complementary w/ESD
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-563-6 |
127048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
2016+ |
SOT-563 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
23+ |
DIP |
50000 |
全新原装假一赔十 |
|||
ON/安森美 |
25+ |
SOT-563 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON |
24+ |
SOT563 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
ON/安森美 |
25+ |
SOT-563 |
18330 |
ON/安森美原装特价NTZD3155CT1G即刻询购立享优惠#长期有货 |
|||
ON |
2021+ |
SOT-563 |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
24+/25+ |
4000 |
原装正品现货库存价优 |
||||
ON |
24+ |
SOT-563 |
6850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
21+ |
SOT363 |
40000 |
全新原装公司现货
|
NTZD3155C芯片相关品牌
NTZD3155C规格书下载地址
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DdatasheetPDF页码索引
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