型号 功能描述 生产厂家 企业 LOGO 操作
NTP13N10G

Power MOSFET 13 A, 100 V, N?묬hannel Enhancement?묺ode TO??20

文件:210.69 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Applications: ● Li-Battery Management System ● USB Power Delivery ● BLDC Drive ● Synchronous Rectifica

ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 12.8A, RDS(ON) = 180mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel 100-V (D-S) MOSFET

文件:773.51 Kbytes Page:6 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

文件:354.05 Kbytes Page:4 Pages

CET

华瑞

NTP13N10G产品属性

  • 类型

    描述

  • 型号

    NTP13N10G

  • 功能描述

    MOSFET 100V 13A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-5 9:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBSEMI/台湾微碧
24+
TO220AB
60000
VB
21+
TO220AB
10000
原装现货假一罚十
onsemi(安森美)
24+
TO220
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
O
24+
TO220AB
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VBsemi/台湾微碧
23+
TO220AB
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
NICCOMP
24+
SMD
156000
原装现货,样品可售
ON Semiconductor
22+
TO2203
9000
原厂渠道,现货配单
NIC
6000
面议
19
DIP/SMD
ON(安森美)
2447
TO-220-3
105000
800个/管一级代理专营品牌!原装正品,优势现货,长期

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