MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

Power MOSFET, Single, N-Channel, 40V, 0.7mΩ, 349A, SO8-FL 5x6

MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.7 m, 323 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5x6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

MOSFET - Power, Single N-Channel, STD Gate, SO8-FL 40 V, 0.70 m, 331 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • B

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes Page：7 Pages

MOSFET ??Power, Single N-Channel 40 V, 0.67 m, 420 A

文件：363.33 Kbytes Page：7 Pages