Power MOSFET and Schottky Diode 30 V, N?묬hannel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package

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P-Channel 4 0 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 Rg and UIS tested

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Features VDS (V) = -40V ID = -40A (VGS = -

Lockit™ Loops and Clips

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Lockit Loops and Clips

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The STEVAL-CCA049V1 is a demonstration board designed for the evaluation

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