Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100 Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  SMPS (

SiC N-Channel MOSFET

FEATURES ·Typ. RDS(on) = 960 mΩ ·100 Avalanche Tested ·RoHS Compliant APPLICATIONS ·Solar Inverters ·Electric Vehicle Charging Stations ·Electric Storing Systems ·UPS

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features  Typ. RDS(on) = 960 m  Ultra Low Gate Charge (typ. QG(tot) = 14 nC)  Low Effective Output Capacitance (typ. Coss = 11 pF)  100 Avalanche Tested  RoHS Compliant Typical Applications  Solar Inverters  Electric Vehicle Charging Stations  Electric Storing Systems  SMPS (

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700V, M1, D2PAK-7L

Features • Typ. RDS(on) = 960 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on

Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L

Features • Typ. RDS(on) = 960 m @ VGS = 20 V • Ultra Low Gate Charge (QG(tot) = 14 nC) • High Speed Switching with Low Capacitance (Coss = 11 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on