位置：首页 > IC中文资料 > NTHL080N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTHL080N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTHL080N120SC1 | MOSFET-SiCPower,SingleN-Channel1200V,80m,31A 文件：374.19 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=80m •UltraLowGateCharge(typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(typ.Coss=80pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •U | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A 文件：288.69 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET-SiCPower,SingleN-Channel1200V,80m,31A 文件：374.19 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,80mohm,1200V,M1,D2PAK-7L Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiCN-ChannelMOSFET FEATURES ·LowEffectiveOutputCapacitance ·UltraLowGateCharge APPLICATIONS ·MainInverters ·GeneralPurposeInverters ·DC/DCConverter ·UPS | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconCarbide(SiC)MOSFET–80mohm,1200V,M1,D2PAK-7L Features •Typ.RDS(on)=80m •UltraLowGateCharge(Typ.QG(tot)=56nC) •LowEffectiveOutputCapacitance(Typ.Coss=79pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typic | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,80m,30A 文件：240.79 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??N?륝hannel,SiliconCarbide1200V,80m 文件：273.17 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON/安森美器场效应管 |
24+23+ |
TO247 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
|||
ON |
21+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON/安森美 |
20+ |
TO-247 |
5000 |
正规报关原装现货系列订货技术支持 |
|||
ON(安森美) |
23+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
标准封装 |
8000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ONSEMI |
23/22+ |
NA |
9000 |
代理渠道.实单必成 |
|||
ON(安森美) |
23+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
onsemi(安森美) |
23+ |
TO-247 |
7807 |
支持大陆交货,美金交易。原装现货库存。 |
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