位置：首页 > IC中文资料 > NTHL040N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTHL040N120SC1 | SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
NTHL040N120SC1 | SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
NTHL040N120SC1 | MOSFET-SiCPower,SingleN-Channel1200V,40m,60A 文件：242.9 Kbytes Page：7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features •Typ.RDS(on)=40m •UltraLowGateCharge(typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(typ.Coss=140pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7 Features •Typ.RDS(on)=40m •UltraLowGateCharge(Typ.QG(tot)=106nC) •LowEffectiveOutputCapacitance(Typ.Coss=139pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,BareDie Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L1200V,40m,60A 文件：249.91 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
MOSFET??N?륝hannel,SiliconCarbide1200V,40m 文件：223.46 Kbytes Page：8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
onsemi |
24+ |
TO-247-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ONSEMI |
24+ |
TO-247 |
5000 |
全新原装正品,现货销售 |
|||
FSC |
23+ |
原厂原封 |
5850 |
订货1周 原装正品 |
|||
ON(安森美) |
23+ |
11755 |
公司只做原装正品,假一赔十 |
||||
ON |
25+ |
TO-247 |
1800 |
原厂原装,价格优势 |
|||
onsemi |
23+ |
TO-247-3LD |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ON/安森美 |
22+ |
TO-247 |
9000 |
原装正品,支持实单! |
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NTHL040N120SC1规格书下载地址
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DdatasheetPDF页码索引
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