型号 功能描述 生产厂家&企业 LOGO 操作
NTH4L080N120SC1

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

ONSEMI

安森美半导体

NTH4L080N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

ONSEMI

安森美半导体

NTH4L080N120SC1

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

ISC

无锡固电

NTH4L080N120SC1

MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m

文件:419.16 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, Silicon Carbide, TO-247-4L 1200 V, 80 m

文件:278.05 Kbytes Page:7 Pages

ONSEMI

安森美半导体

更新时间:2025-8-19 14:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
ON
23+
TO-247
3000
全新原装正品!一手货源价格优势!
DELTAELECTR
6000
面议
19
DIP/SMD
ON(安森美)
23+
TO-247-4
14548
公司只做原装正品,假一赔十
onsemi
23+
TO-247-4
1356
原厂正品现货SiC MOSFET全系列
ON
24+
NA
3000
进口原装 假一罚十 现货
ON
TO247
30
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
2023+
TO247
8800
正品渠道现货 终端可提供BOM表配单。
onsemi(安森美)
2025+
TO-247-4
55740
ON(安森美)
2511
TO-247-4
4525
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价

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