型号 功能描述 生产厂家&企业 LOGO 操作
NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

ONSEMI

安森美半导体

NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

ONSEMI

安森美半导体

NTH4L040N120SC1

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

ISC

无锡固电

NTH4L040N120SC1

MOSFET ??SiC Power, Single N-Channel, TO247-4L 1200 V, 40 m, 58 A

文件:282.35 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typi

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typica

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (QG(tot) = 106 nC) • High Speed Switching with Low Capacitance (Coss = 137 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level

ONSEMI

安森美半导体

更新时间:2025-8-17 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
标准封装
8000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON/
24+
TO247-4
5000
全新原装正品,现货销售
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
ON(安森美)
25+
标准封装
8000
原装,请咨询
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
ON(安森美)
2447
TO-247-3
115000
450个/管一级代理专营品牌!原装正品,优势现货,长期
ON
23+
TO247-4
10000
正规渠道,只有原装!
onsemi(安森美)
24+
TO-247-4
8110
支持大陆交货,美金交易。原装现货库存。
ON(安森美)
24+
TO-247-4
10048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
24+
NA
3000
进口原装 假一罚十 现货

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