位置：首页 > IC中文资料 > NTH4L040N120M3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTH4L040N120M3S | Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical | ONSEMI 安森美半导体 |   | |
NTH4L040N120M3S | Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical | ONSEMI 安森美半导体 | | |
NTH4L040N120M3S | Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L Features • Typ. RDS(on) = 40 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 75 nC) • High Speed Switching with Low Capacitance (Coss = 80 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on s | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2130+ |
TO-247 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
N/A |
24+ |
N/A |
29270 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
23+ |
TO247-4 |
10000 |
正规渠道,只有原装! |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON/ |
24+ |
TO247-4 |
5000 |
全新原装正品,现货销售 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
2447 |
TO-247-3 |
115000 |
450个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
onsemi(安森美) |
24+ |
TO2474 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
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DdatasheetPDF页码索引
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