Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-4L

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

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Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features • Typ. RDS(on) = 12 m @ VGS = 18 V Typ. RDS(on) = 15 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Fr

MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 m, 142 A

文件：355.24 Kbytes Page：8 Pages