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位置：首页 > IC中文资料第296页 > NTH

NTH价格

参考价格：￥79.8761

型号：NTH 品牌：Weller 备注：这里有NTH多少钱，2024年最近7天走势，今日出价，今日竞价，NTH批发/采购报价，NTH行情走势销售排行榜，NTH报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NTH

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH0505M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH0509M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH0512M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH0515M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH1205M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH1209M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH1212M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH1215M

Isolated 2W Dual Output SM DC-DC Converters

DESCRIPTION TheNTHseriesofminiaturesurfacemountedDC-DCConvertersemployleadframetechnologyandtransfermouldingtechniquestobringallofthebenefitsofICstylepackagingtohybridcircuitry.Thecomponentleadterminationofthisproductrangeisleadfreecompatible,thereforet

CANDD

C&D Technologies

CANDD
NTH4L013N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200V, M3S, TO-247-4L

Features Typ.RDS(on)=13m@VGS=18V UltraLowGateCharge(QG(tot)=254nC) HighSpeedSwitchingwithLowCapacitance(Coss=262pF) 100AvalancheTested ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L014N120M3P

Silicon Carbide SiC MOSFET - 14mohm, 1200V, M3, TO247-4L

Features •Typ.RDS(on)=14m@VGS=18V •LowSwitchingLosses(Typ.EON1308Jat74A,800V) •100AvalancheTested •TheseDevicesareRoHSCompliant TypicalApplications •SolarInverters •ElectricVehicleChargingStations •UPS(UninterruptiblePowerSupplies) •EnergySto

ONSEMION Semiconductor

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ONSEMI
NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L015N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L015N065SC1_V01

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L015N065SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 12mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L020N090SC1

Silicon Carbide SiC MOSFET - 20 mohm, 900 V, M2, TO-247-4L

Features •Typ.RDS(on)=20m@VGS=15V Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinter

ONSEMION Semiconductor

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ONSEMI
NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L020N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=220nC) •HighSpeedSwitchingwithLowCapacitance(Coss=258pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L022N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

ONSEMION Semiconductor

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ONSEMI
NTH4L022N120M3S_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200V, M3, TO-247-4L

Features •Typ.RDS(on)=22m@VGS=18V •LowSwitchingLosses(Typ.EON490Jat40A,800V) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalApplications •SolarInverters •ElectricV

ONSEMION Semiconductor

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ONSEMI
NTH4L025N065SC1

Silicon Carbide SiC MOSFET - 19 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=19m@VGS=18V Typ.RDS(on)=25m@VGS=15V •UltraLowGateCharge(QG(tot)=164nC) •LowCapacitance(Coss=278pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelin

ONSEMION Semiconductor

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ONSEMI
NTH4L028N170M1

Silicon Carbide (SiC) MOSFET, M1, TO-247-4L 1700 V, 28 mOhm

Features •Typ.RDS(on)=28m@VGS=20V •UltraLowGateCharge(QG(tot)=200nC) •HighSpeedSwitchingwithLowCapacitance(Coss=200pF) •100AvalancheTested •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •UPS •DC/DCConverter •BoostConverter

ONSEMION Semiconductor

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ONSEMI
NTH4L028N170M1

SiC N-Channel MOSFET

FEATURES ·HighBlockingVoltagewithLowOn-Resistance ·RDS(ON)=40mΩ（TYP.）@VGS=20VTj=25℃ ·HighSpeedSwitchingwithLowCapacitance ·EasytoParallelandSimpletoDrive APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NTH4L030N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=29m@VGS=18V •UltraLowGateCharge(QG(tot)=107nC) •HighSpeedSwitchingwithLowCapacitance(Coss=106pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120M3S_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 40 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typi

ONSEMION Semiconductor

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ONSEMI
NTH4L040N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=40m •UltraLowGateCharge(QG(tot)=106nC) •HighSpeedSwitchingwithLowCapacitance(Coss=137pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typica

ONSEMION Semiconductor

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ONSEMI
NTH4L045N065SC1

Silicon Carbide SiC MOSFET - 33 mohm, 650V, M2, TO-247-4L

Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L045N065SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L045N065SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 33mohm, 650V, M2, TO-247-4L

Features •Typ.RDS(on)=33m@VGS=18V Typ.RDS(on)=45m@VGS=15V •UltraLowGateCharge(QG(tot)=105nC) •HighSpeedSwitchingwithLowCapacitance(Coss=162pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Fr

ONSEMION Semiconductor

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ONSEMI
NTH4L060N065SC1

Silicon Carbide SiC MOSFET - 44 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=44m@VGS=18V Typ.RDS(on)=60m@VGS=15V •UltraLowGateCharge(QG(tot)=74nC) •LowCapacitance(Coss=133pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

ONSEMION Semiconductor

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ONSEMI
NTH4L060N090SC1

Silicon Carbide SiC MOSFET - 60 mohm, 900V, M2, TO-247-4L

Features •Typ.RDS(on)=60m@VGS=15V Typ.RDS(on)=43m@VGS=18V •UltraLowGateCharge(typ.QG(tot)=87nC) •LowEffectiveOutputCapacitance(typ.Coss=113pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle

ONSEMION Semiconductor

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ONSEMI
NTH4L070N120M3S

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200V, M3S, TO-247-4L

Features •Typ.RDS(on)=65m@VGS=18V •UltraLowGateCharge(QG(tot)=57nC) •HighSpeedSwitchingwithLowCapacitance(Coss=57pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalA

ONSEMION Semiconductor

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ONSEMI
NTH4L075N065SC1

Silicon Carbide SiC MOSFET - 57 mohm, 650 V, M2, TO-247-4L

Features •Typ.RDS(on)=57m@VGS=18V Typ.RDS(on)=75m@VGS=15V •UltraLowGateCharge(QG(tot)=61nC) •LowOutputCapacitance(Coss=107pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondle

ONSEMION Semiconductor

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ONSEMI
NTH4L080N120SC1

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

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ONSEMI
NTH4L080N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
NTH4L080N120SC1_V01

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

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ONSEMI
NTH4L080N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

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ONSEMI
NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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ONSEMI
NTH4L160N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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ONSEMI
NTH4L160N120SC1_V01

Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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ONSEMI
NTH4L160N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, TO-247-4L

Features •Typ.RDS(on)=160m •UltraLowGateCharge(QG(tot)=34nC) •HighSpeedSwitchingwithLowCapacitance(Coss=49.5pF) •100AvalancheTested •TJ=175°C •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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ONSEMI
NTH4LN061N60S5H

MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247-4L 600 V, 61 m, 41 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features 650V@TJ=150C/Typ.RDS(on)=48.8m 100AvalancheTested Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic

ONSEMION Semiconductor

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ONSEMI
NTHL015N065SC1

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-3L

Features •Typ.RDS(on)=12m@VGS=18V Typ.RDS(on)=15m@VGS=15V •UltraLowGateCharge(QG(tot)=283nC) •HighSpeedSwitchingwithLowCapacitance(Coss=430pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsec

ONSEMION Semiconductor

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ONSEMI
NTHL017N60S5H

MOSFET - Power, Single N-Channel, SUPERFET, FAST, TO247 600 V, 17 m, 75 A

Description TheSUPERFETVMOSFETFASTserieshelpsmaximizesystem efficiencybytheextremelylowswitchinglossesinhardswitching application. Features •650V@TJ=150°C/Typ.RDS(on)=14.3m •100AvalancheTested •Pb−Free,HalogenFree/BFRFreeandRoHSCompliant Applic

ONSEMION Semiconductor

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ONSEMI
NTHL017N60S5H

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(TYP)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·ServerPowerSupplies ·IndustrialPowerSupplies

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NTHL020N090SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

ONSEMION Semiconductor

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ONSEMI
NTHL020N090SC1_V01

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features •Typ.RDS(on)=20m@VGS=15V •Typ.RDS(on)=16m@VGS=18V •UltraLowGateCharge(QG(tot)=196nC) •LowEffectiveOutputCapacitance(Coss=296pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelint

ONSEMION Semiconductor

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ONSEMI
NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos

ONSEMION Semiconductor

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ONSEMI
NTHL020N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost

ONSEMION Semiconductor

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ONSEMI
NTHL020N120SC1_V01

Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boos

ONSEMION Semiconductor

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ONSEMI
NTHL020N120SC1_V02

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 1200V, M1, TO-247-3L

Features •Typ.RDS(on)=20m •UltraLowGateCharge(QG(tot)=203nC) •Capacitance(Coss=260pF) •100UILTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) TypicalApplications •UPS •DC−DCConverter •Boost

ONSEMION Semiconductor

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ONSEMI

NTH产品属性

  • 类型

    描述

  • 型号

    NTH

  • 功能描述

    烙铁 Weller Chisel Tip For WMP Solder Penc

  • RoHS

    否

  • 制造商

    Weller

  • 产品

    Soldering Stations

  • 类型

    Digital, Iron, Stand, Cleaner

  • 瓦特

    50 W

  • 最大温度

    + 850 F

  • 电缆类型

    US Cord Included

NTH供应商更多...

更新时间：2024-5-25 15:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳宝隆芯业科技有限公司
NTH027N65S3F-F155
ON/安森美
23+
TO-247-3
34298
原装正品实单可谈 库存现货
询价
深圳市一线半导体有限公司
NTH5G16P40B473J07TH
22963
询价
深圳市富利微电子科技有限公司
NTH027N65S3F-F155
ON/安森美
23+
TO-247-3
30000
原装正品公司现货,假一赔十!
询价
中天科工半导体（深圳）有限公司
NTHS5441T1G
onsemi
24+
ChipFET?
30000
晶体管-分立半导体产品-原装正品
询价
深圳市恒凯威科技开发有限公司
NTHD4P02FT1G
ON/安森美
21+
SOT23-8
9080
只做原装,质量保证
询价
深圳市汇莱威科技有限公司
NTHD3101FT1G
ON/安森美
SOT23-8
505348
16余年资质 绝对原盒原盘 更多数量
询价
深圳市创盛芯科技有限公司
NTHD3101FT1G
ON/安森美
22+
SOT23-8
9021
原装现货假一赔十
询价
深圳市纳艾斯科技有限公司
NTH1215MC
MURATA
2018+
SMD
6000
全新原装正品现货,假一赔佰
询价
深圳市英瑞芯科技有限公司
NTHS5404T1G
ON
2022+
NA
8600
原装正品,欢迎来电咨询!
询价
深圳市兴灿科技有限公司
NTHD4102PT1G
ON/安森美
23+
ChipFET-8
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价

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  • Motorola
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  • SUNMATE
  • Temic
  • TRACOPOWER

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