MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道功率 MOSFET 100V，17A，81mΩ

N-Channel Power MOSFET 100 V, 17 A, 81 m

文件：142.81 Kbytes Page：7 Pages

N-Channel MOSFET uses advanced SGT technology

文件：2.85426 Mbytes Page：5 Pages

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET – Power, N-Channel 100 V, 17 A, 81 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

N-Channel Power MOSFET 100 V, 17 A, 81 m

文件：142.81 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m廓

文件：145.3 Kbytes Page：7 Pages

N-Channel MOSFET uses advanced trench technology

文件：1.56253 Mbytes Page：5 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m

文件：122.14 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

单 N 沟道逻辑电平功率 MOSFET 100V，19A，74mΩ

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m廓

文件：145.3 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m

文件：122.14 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：84.9 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 19 A, 74 m廓

文件：145.3 Kbytes Page：7 Pages

N-Channel Power MOSFET 100 V, 17 A, 81 m

文件：142.81 Kbytes Page：7 Pages

16Kbit Serial CMOS EEPROM

General Description The AK6416A is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416A has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416A can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416A is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416A has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416A can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416C is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416C has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416C can operate full function under wide operating voltage

16Kbit Serial CMOS EEPROM

General Description The AK6416C is a 16384bit, serial, read/write, non-volatile memory device fabricated using an advanced CMOS EEPROM technology. The AK6416C has 16384bits of memory organized into 1024 registers of 16 bits each. The AK6416C can operate full function under wide operating voltage

CUSTOMER PRODUCT SPECIFICATION

文件：72.81 Kbytes Page：1 Pages