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NTD4809N价格
参考价格：￥1.2006
型号：NTD4809N-35G 品牌：ON 备注：这里有NTD4809N多少钱，2025年最近7天走势，今日出价，今日竞价，NTD4809N批发/采购报价，NTD4809N行情走势销售排行榜，NTD4809N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTD4809N | Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery | ONSEMI 安森美半导体 |   | |
NTD4809N | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NTD4809N | Power MOSFET 文件：122.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery | ONSEMI 安森美半导体 | | ||
25 V, 58 A, Single N- Channel, DPAK/IPAK Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
25 V, 58 A, Single N- Channel, DPAK/IPAK Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
25 V, 58 A, Single N- Channel, DPAK/IPAK Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
25 V, 58 A, Single N- Channel, DPAK/IPAK Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
N-channel Advanced Mode Power MOSFET Features VDS= 40V, ID= 150A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery • | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery | ONSEMI 安森美半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 30V, ID= 80A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET 文件：122.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：122.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：122.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK 文件：81.78 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK 文件：81.78 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK 文件：81.78 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：996.66 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：959.97 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK 文件：81.78 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK 文件：81.78 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 文件：122.83 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
KK Mini -2.50mm & 2.54mm Modular Interconnection System 文件：69.47 Kbytes Page：2 Pages | Molex 莫仕 | | ||
KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Reel Selective Gold (Au) 文件：173.43 Kbytes Page：3 Pages | MOLEX1 莫仕 | | ||
KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Tin, Bag 文件：172.74 Kbytes Page：3 Pages | MOLEX1 莫仕 | | ||
KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Hot Tin, Reel 文件：135.12 Kbytes Page：3 Pages | MOLEX1 莫仕 | | ||
KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Un-plated, Reel 文件：133.66 Kbytes Page：3 Pages | MOLEX3Molex Electronics Ltd. 莫仕 | |
NTD4809N产品属性
- 类型
描述
- 型号
NTD4809N
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
6025 |
原厂直销,现货供应,账期支持! |
|||
ON/安森美 |
24+ |
TO252-3 |
8527 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
24+ |
DPAK |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
24+ |
SOT-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON |
1822+ |
SOT-252 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
ON/安森美 |
09+ |
TO-252 |
17 |
||||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON/安森美 |
22+ |
DPAK |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
21+ |
DPAK |
8080 |
只做原装,质量保证 |
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