NTD4809N价格

参考价格:¥1.2006

型号:NTD4809N-35G 品牌:ON 备注:这里有NTD4809N多少钱,2025年最近7天走势,今日出价,今日竞价,NTD4809N批发/采购报价,NTD4809N行情走势销售排行榜,NTD4809N报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD4809N

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

ONSEMI

安森美半导体

NTD4809N

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NTD4809N

单 N 沟道,功率 MOSFET,30V,58A,9mΩ

ONSEMI

安森美半导体

NTD4809N

Power MOSFET

文件:122.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

ONSEMI

安森美半导体

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

N-channel Advanced Mode Power MOSFET

Features VDS= 40V, ID= 150A RDS(ON)

Bychip

百域芯

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

ONSEMI

安森美半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

Bychip

百域芯

Power MOSFET

文件:122.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:959.96 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:122.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:959.96 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:122.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

25 V, 58 A, Single N- Channel, DPAK/IPAK

ONSEMI

安森美半导体

功率 MOSFET,30V,58A 9mΩ,单 N 沟道,DPAK

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件:81.78 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件:81.78 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件:81.78 Kbytes Page:8 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

文件:996.66 Kbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.97 Kbytes Page:8 Pages

VBSEMI

微碧半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件:81.78 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件:81.78 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:122.83 Kbytes Page:9 Pages

ONSEMI

安森美半导体

KK Mini -2.50mm & 2.54mm Modular Interconnection System

文件:69.47 Kbytes Page:2 Pages

Molex

莫仕

KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Reel Selective Gold (Au)

文件:173.43 Kbytes Page:3 Pages

Molex

莫仕

KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Tin, Bag

文件:172.74 Kbytes Page:3 Pages

Molex

莫仕

KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Hot Tin, Reel

文件:135.12 Kbytes Page:3 Pages

Molex

莫仕

KK짰 Cat Ear Crimp Terminal 4809, 22-30 AWG, Un-plated, Reel

文件:133.66 Kbytes Page:3 Pages

Molex

莫仕

NTD4809N产品属性

  • 类型

    描述

  • 型号

    NTD4809N

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

更新时间:2025-11-21 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
24+
SOT-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ON/安森美
25+
TO-252
37738
ON/安森美全新特价NTD4809NHT4G即刻询购立享优惠#长期有货
ON/安森美
24+
NA/
6025
原厂直销,现货供应,账期支持!
ON
10+
TO252
2350
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONS
24+
TO-252
90000
一级代理商进口原装现货、价格合理
ON
23+
原厂封装
13528
振宏微原装正品,假一罚百
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
ON/安森美
24+
TO252-3
1499
正品原装现货

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