Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，30V，58A，9mΩ

Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK • Low RDS(on) to Minimize Conduction Losses\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• RoHS Compliant;

Power MOSFET

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb-Free Devices Applications • CPU Power Delivery •

N-channel Advanced Mode Power MOSFET

Features VDS= 40V, ID= 150A RDS(ON)

功率 MOSFET，30V，58A 9mΩ，单 N 沟道，DPAK

功率 MOSFET，30 V，58 A，单 N 沟道，DPAK/IPAK • Low RDS(on) to minimize Conduction Losses\n• Low Capacitance to Minimize Driver Losses\n• Optimized Gate Charge to Minimize Switching Losses\n• These are Pb-Free Devices;

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • CPU Power Delivery •

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • CPU Power Delivery

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 80A RDS(ON)

Power MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

Power MOSFET

文件：122.83 Kbytes Page：9 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

Power MOSFET

文件：122.83 Kbytes Page：9 Pages

25 V, 58 A, Single N- Channel, DPAK/IPAK

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件：81.78 Kbytes Page：8 Pages

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件：81.78 Kbytes Page：8 Pages

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件：81.78 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：996.66 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：959.97 Kbytes Page：8 Pages

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件：81.78 Kbytes Page：8 Pages

Power MOSFET 30 V, 58 A, Single N?묬hannel, DPAK/IPAK

文件：81.78 Kbytes Page：8 Pages

Power MOSFET

文件：122.83 Kbytes Page：9 Pages

Isolated 1W Dual Output DC-DC Converters

DESCRIPTION The NMA series of industrial temperature range DC-DC converters are the standard building blocks for on-board distributed power systems. They are ideally suited for providing dual rail supplies on primarily digital boards with the added benefit of galvanic isolation to reduce switchin

Isolated 1W Single Output DC-DC Converters

DESCRIPTION The NME Series of DC-DC Converters is particularly suited to isolating and/or converting DC power rails. The galvanic isolation allows the device to be configured to provide an isolated negative rail in systems where only positive rails exist. FEATURES ■ Single Isolated Output ■ In

Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode

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Dual 105mW Headphone Amplifier with Active-Low Shutdown Mode

文件：903.44 Kbytes Page：18 Pages

3kVDC Isolated 1W Single & Dual Output DC-DC Converters

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