HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

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Power MOSFET

MOSFET–Power,N-Channel,LogicLevel,DPAK18A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •AECQ101Qualified−NTDV18N06L •TheseDevicesarePb−FreeandareRoHSCompliant Typical

Power MOSFET 18 A, 60 V, Logic Level N.Channel DPAK

MOSFET–Power,N-Channel,LogicLevel,DPAK18A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •AECQ101Qualified−NTDV18N06L •TheseDevicesarePb−FreeandareRoHSCompliant Typical

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

Power MOSFET

MOSFET–Power,N-Channel,LogicLevel,DPAK18A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •AECQ101Qualified−NTDV18N06L •TheseDevicesarePb−FreeandareRoHSCompliant Typical

30V N-Channel MOSFET

Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads •

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

ThislogiclevelverticalpowerMOSFETisageneralpurposepart thatprovidesthe“bestofdesign”availabletodayinalowcostpower package.Avalancheenergyissuesmakethispartanidealdesignin. Thedrain−to−sourcediodehasaidealfastbutsoftrecovery. Features •Ultra−LowRDS(

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

ThislogiclevelverticalpowerMOSFETisageneralpurposepart thatprovidesthe“bestofdesign”availabletodayinalowcostpower package.Avalancheenergyissuesmakethispartanidealdesignin. Thedrain−to−sourcediodehasaidealfastbutsoftrecovery. Features •Ultra−LowRDS(

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

Power MOSFET

MOSFET–Power,N-Channel,DPAK20A,30V ThislogiclevelverticalpowerMOSFETisageneralpurposepartthatprovidesthe“bestofdesign”availabletodayinalowcostpowerpackage.Avalancheenergyissuesmakethispartanidealdesignin.Thedrain−to−sourcediodehasaidealfastbutsoft

MOSFET –Power, N-Channel, DPAK 20 A, 30 V

ThislogiclevelverticalpowerMOSFETisageneralpurposepart thatprovidesthe“bestofdesign”availabletodayinalowcostpower package.Avalancheenergyissuesmakethispartanidealdesignin. Thedrain−to−sourcediodehasaidealfastbutsoftrecovery. Features •Ultra−LowRDS(

30V N-Channel MOSFET

Features •Ultra−LowRDS(on),SingleBase,AdvancedTechnology •SPICEParametersAvailable •DiodeisCharacterizedforuseinBridgeCircuits •IDSSandV(on)SpecifiedatElevatedTemperatures •HighAvalancheEnergySpecified TypicalApplications •PowerSupplies •InductiveLoads •

Power MOSFET 20 Amps, 60 Volts, N?묬hannel DPAK

MOSFET–Power,N-Channel,DPAK20A,60V Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotalGateCharge •LowerandTighterVSD

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

60V N-Channel MOSFET

TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuits VDS ID(atVGS=10V) RDS(ON)(atVGS=4.5V) 60V 20A

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

MOSFET - Power, N-Channel, Logic Level, DPAK/IPAK 20 A, 60 V

Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrolsandbridge circuits. Features •AECQ101Qualified−NTDV20N06L •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •Po

60V N-Channel MOSFET

TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuits VDS ID(atVGS=10V) RDS(ON)(atVGS=4.5V) 60V 20A

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

Power MOSFET

PowerMOSFET20Amps,60Volts,N−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •LowerCapacitances •LowerTotal

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY

DPASeries •16PinDIPSSR •Ratingsto1A@280VAC •SCRoutput •Voltageorcurrent-controlinput •Zero-crossing(resistiveloads)output

TrenchFET® Power MOSFET

TrenchFET®PowerMOSFET 175°CJunctionTemperature PRODUCTSUMMARY FEATURES VDS(V)=60V ID=35A(VGS=10V)
RDS(ON)25m(VGS=10V)
RDS(ON)30m(VGS=4.5V)

TrenchFET® Power MOSFET

TrenchFET®PowerMOSFET 175°CJunctionTemperature PRODUCTSUMMARY FEATURES VDS(V)=60V ID=35A(VGS=10V)
RDS(ON)25m(VGS=10V)
RDS(ON)30m(VGS=4.5V)

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designedforlowvoltage,highspeedswitchingapplicationsandto withstandhighenergyintheavalancheandcommutationmodes. Thesourceïtoïdraindioderecoverytimeiscomparabletoadiscrete fastrecoverydiode. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqu

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designedforlowvoltage,highspeedswitchingapplicationsandto withstandhighenergyintheavalancheandcommutationmodes. Thesourceïtoïdraindioderecoverytimeiscomparabletoadiscrete fastrecoverydiode. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqu

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designedforlowvoltage,highspeedswitchingapplicationsandto withstandhighenergyintheavalancheandcommutationmodes. Thesourceïtoïdraindioderecoverytimeiscomparabletoadiscrete fastrecoverydiode. Features •SPrefixforAutomotiveandOtherApplicationsRequiringUniqu

MOSFET - Power, Single N-Channel, SUPERFET, with Zener Diode, DPAK 600 V, 280 m, 13 A

Description SUPERFETVMOSFETEasyDriveseriescombinesexcellent switchingperformancewithoutsacrificingeaseofuseandEMIissues forbothhardandsoftswitchingtopologies. Features 650V@TJ=150C,Typ. RDS(on)=224m 100AvalancheTested Pb−Free,HalogenFree/BFR

??0 V, ??2 A, P?묬hannel DPAK

PowerMOSFET−60V,−12A,P−ChannelDPAK ThisPowerMOSFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Designedforlow−voltage,high−speedswitchingapplicationsinpowersupplies,converters,andpowermotorcontrols.Thesedevicesareparticularlywellsuite

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

??0 V, ??2 A, P?묬hannel DPAK

PowerMOSFET−60V,−12A,P−ChannelDPAK ThisPowerMOSFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Designedforlow−voltage,high−speedswitchingapplicationsinpowersupplies,converters,andpowermotorcontrols.Thesedevicesareparticularlywellsuite

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

??0 V, ??2 A, P?묬hannel DPAK

PowerMOSFET−60V,−12A,P−ChannelDPAK ThisPowerMOSFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Designedforlow−voltage,high−speedswitchingapplicationsinpowersupplies,converters,andpowermotorcontrols.Thesedevicesareparticularlywellsuite

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

P-channel Enhancement Mode Power MOSFET

Features VDS=-60V,ID=-20A RDS(ON)

P-Channel 60-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecification •LowerDiodeReverseRecoveryTime •LowerReverseRecoveryStoredCharge •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuit

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecification •LowerDiodeReverseRecoveryTime •LowerReverseRecoveryStoredCharge •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuit

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecification •LowerDiodeReverseRecoveryTime •LowerReverseRecoveryStoredCharge •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuit

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

Power MOSFET

PowerMOSFET12Amps,60Volts,LogicLevelN−ChannelDPAK Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandpowermotorcontrolsandbridgecircuits. Features •Pb−FreePackagesareAvailable •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecifica

12 Amps, 60 Volts, Logic Level N−Channel DPAK

Features •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecification •LowerDiodeReverseRecoveryTime •LowerReverseRecoveryStoredCharge •TheseDevicesarePb−FreeandareRoHSCompliant TypicalApplications •PowerSupplies •Converters •PowerMotorControls •BridgeCircuit

60V N -Channel MOSFET

Features •LowerRDS(on) •LowerVDS(on) •TighterVSDSpecification •LowerDiodeReverseRecoveryTime •LowerReverseRecoveryStoredCharge

N-channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON)

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET–Power,Single,N-Channel,DPAK/IPAK30V,117A Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •OptimizedGateChargetoMinimizeSwitchingLosses •AECQ101Qualified−NVD4804N •TheseDevicesarePb−FreeandareRoHSCompliant A