位置：首页 > IC中文资料 > NTBG160N120SC1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG160N120SC1 | Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) | ONSEMI 安森美半导体 |   | |
NTBG160N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) | ONSEMI 安森美半导体 | | |
NTBG160N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 160 m, 19.5 A 文件：245.01 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – EliteSiC, 160mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, Bare Die Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 20 m • Ultra Low Gate Charge (QG(tot) = 203 nC) • Capacitance (Coss = 260 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC−DC Converter • Boos | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Onsemi |
22+ |
TO263 |
9600 |
安森美现货库存,终端可送样 |
|||
ON |
两年内 |
NA |
769 |
实单价格可谈 |
|||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
|||
onsemi |
23+ |
D2PAK-7 |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
Onsemi |
22+ |
TO263 |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
onsemi(安森美) |
24+ |
TO-263-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ON/安森美 |
24+ |
TO-263 |
2000 |
原装现货 假一罚十 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
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NTBG160N120SC1规格书下载地址
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DdatasheetPDF页码索引
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