位置:首页 > IC中文资料 > NTBG040N120SC1
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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NTBG040N120SC1 | Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | ||
NTBG040N120SC1 | Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | ||
NTBG040N120SC1 | MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m, 60 A 文件:249.91 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | ||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7 Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | |||
Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7 Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ | ONSEMI 安森美半导体 | |||
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl | ONSEMI 安森美半导体 | |||
MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 40 m 文件:223.46 Kbytes Page:8 Pages | ONSEMI 安森美半导体 |
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
D2PAK-7 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ON |
22+ |
NA |
680 |
原装正品支持实单 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
onsemi(安森美) |
2025+ |
D2PAK-7 |
55740 |
||||
ON2 |
23+ |
原厂原封 |
800 |
订货1周 原装正品 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
onsemi |
23+ |
D2PAK-7 |
1356 |
原厂正品现货SiC MOSFET全系列 |
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DdatasheetPDF页码索引
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