型号 功能描述 生产厂家&企业 LOGO 操作
NTBG040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

NTBG040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

NTBG040N120SC1

MOSFET ??SiC Power, Single N-Channel, D2PAK-7L 1200 V, 40 m, 60 A

文件:249.91 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7

Features • Typ. RDS(on) = 40 m • Ultra Low Gate Charge (Typ. QG(tot) = 106 nC) • Low Effective Output Capacitance (Typ. Coss = 139 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typ

ONSEMI

安森美半导体

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl

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安森美半导体

MOSFET ??N?륝hannel, Silicon Carbide 1200 V, 40 m

文件:223.46 Kbytes Page:8 Pages

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安森美半导体

更新时间:2025-8-9 9:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON SEMICONDUCTOR
24+
con
35960
查现货到京北通宇商城
ONSEMI
23+
MOSFET
5864
原装原标原盒 给价就出 全网最低
onsemi(安森美)
24+
D2PAK-7
8357
支持大陆交货,美金交易。原装现货库存。
onsemi(安森美)
2025+
D2PAK-7
55740
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
ON
22+
NA
680
原装正品支持实单
ON(安森美)
23+
D2PAK-7L
15764
公司只做原装正品,假一赔十
ON
25+
SOT23
2400
原厂原装,价格优势
ON2
23+
原厂原封
800
订货1周 原装正品
ON
2126
D2PAK-7
686
原装正品现货,德为本,正为先,通天下!

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