位置：首页 > IC中文资料 > NTBG040N120M3S
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG040N120M3S | SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,D2PAK-7L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(TOT)=75nC) •HighSpeedSwitchingwithLowCapacitance(COSS=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb−Free2LI(onSecondLevelInterconnection) TypicalA | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,TO-247-3L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(onsecondlevelinterconnection) Typical | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M3S,D2PAK-7L Features •Typ.RDS(on)=40m@VGS=18V •UltraLowGateCharge(QG(tot)=75nC) •HighSpeedSwitchingwithLowCapacitance(Coss=80pF) •100AvalancheTested •AEC−Q101QualifiedandPPAPCapable •ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb−Free2LI(ons | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
D2PAK7 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON |
22+ |
NA |
780 |
原装正品支持实单 |
|||
ON2 |
23+ |
原厂原封 |
800 |
订货1周 原装正品 |
|||
ON |
2126 |
D2PAK-7 |
686 |
原装正品现货,德为本,正为先,通天下! |
|||
ON |
25+ |
SOT23 |
2400 |
原厂原装,价格优势 |
|||
ONSEMI |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
onsemi |
23+ |
D2PAK-7L |
1356 |
原厂正品现货SiC MOSFET全系列 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
2025+ |
D2PAK-7 |
55740 |
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DdatasheetPDF页码索引
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