Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features  Typical RDS(ON) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100% Avalanche Tested  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on Second Level Interconnection)

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 152 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 153 pF) • 100 Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Appli

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features  Typical RDS(ON) = 23 m @ VGS = 18 V  Ultra Low Gate Charge (QG(tot) = 69 nC)  High Speed Switching with Low Capacitance (Coss = 153 pF)  100 Avalanche Tested  AEC−Q101 Qualified and PPAP Capable  This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (

Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TO-247-3L

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 153 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (