isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 52A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 30mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，100V，52A，30 mΩ，单 N 沟道，D2PAK

N 沟道，增强模式，D2PAK • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Avalanche Energy Specified\n• IDSS and RDS(on) Specified at Elevated Temperature\n• Mounting Information Provided for the D2PAK Package\n• Pb-Free Packages are Available;

N-Channel Enhancement?묺ode D2PAK

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N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes Page：8 Pages

N-Channel Enhancement−Mode D2PAK

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes Page：8 Pages

N-Channel Enhancement?묺ode D2PAK

文件：79.42 Kbytes Page：8 Pages

Power MOSFET 52 Amps, 100 Volts

文件：72.57 Kbytes Page：8 Pages

Power MOSFET 52 Amps, 100 Volts

文件：72.57 Kbytes Page：8 Pages

Power MOSFET 52 Amps, 100 Volts

文件：72.57 Kbytes Page：8 Pages