Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

Surface Mount Schottky Power Rectifier

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封装/外壳：DO-214AA，SMB 包装：管件 描述：DIODE SCHOTTKY 4A 10V SMB2 分立半导体产品 二极管 - 整流器 - 单

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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