Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polari

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

封装/外壳：DO-214AB，SMC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 30V 3A SMC 分立半导体产品 二极管 - 整流器 - 单

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and po

Surface Mount Schottky Power Rectifier

These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polari

Surface Mount Schottky Power Rectifier

文件：98.51 Kbytes Page：4 Pages

Surface Mount Schottky Power Rectifier

文件：98.51 Kbytes Page：4 Pages