位置：首页 > IC中文资料 > NRVBAF3200T3G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NRVBAF3200T3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 |   | |
NRVBAF3200T3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | |
NRVBAF3200T3G | 封装/外壳：DO-221AC，SMA 扁平引线 包装：卷带（TR）剪切带（CT） 描述：DIODE SCHOTTKY 200V 3A SMA-FL 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
NRVBAF3200T3G | Surface Mount Schottky Power Rectifier | ONSEMI 安森美半导体 | | |
NRVBAF3200T3G | Surface Mount Schottky Power Rectifier 文件：67.87 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
NRVBAF3200T3G | Surface Mount Schottky Power Rectifier 文件：68.83 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：67.87 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：68.83 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：106.24 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
ON(安森美) |
2447 |
DO-221AC |
115000 |
5000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ON(安森美) |
25+ |
SMA-FL |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON |
24+ |
SMA-FL |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
ONSEMI/安森美 |
25+ |
SMA |
32000 |
ONSEMI/安森美全新特价NRVBAF3200T3G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
22+ |
SMA-FL |
9000 |
原装正品,支持实单! |
|||
ON |
20+ |
SMA-FL |
5000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
2023+ |
N/A |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
ONSEMI/安森美 |
24+ |
SMA-FL |
60000 |
NRVBAF3200T3G芯片相关品牌
NRVBAF3200T3G规格书下载地址
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参数 参数值 包装 标准卷带 系列 汽车级，AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向（Vr）（最大值） 30V 电流 - 平均整流（Io） 1A 不同 If 时的电压 - 正向（Vf 410mV @ 1A 速度 快速恢复 = 200mA（Io） 反向恢复时间（trr） 快速恢复 = 200mA（Io） 不同Vr 时的电流 - 反向漏电流 1
2021-10-12
DdatasheetPDF页码索引
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