Gallium Nitride 28V, 5W RF Power Transistor

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Low cost, surface mount SOIC package

文件：953.72 Kbytes Page：10 Pages

GaN Amplifier 28 V, 5 W, DC - 6 GHz

The NPTB00004A GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 5W (37 dBm) in an industry standard surface mount SOIC plastic package. At frequencies below 3GHz, the NPTB00004A is a dro ·Broadband Operation from DC-6 GHz\n·Drop in Replacement for NPTB00004\n·High Drain Efficiency (>55%)\n·Industry Standard Plastic Package\n·28V Operation;

GaN Power Transistor, 28 V, 5 W DC - 6 GHz

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. ·57 % Drain Efficiency @ 2.5 GHz\n·GaN on Si HEMT D-Mode Transistor\n·Tunable from DC - 6 GHz\n·Industry standard SOIC plastic package\n·28V Operation\n·RoHS* Compliant\n·100 % RF Tested\n·14.8 dB Gain @ 2.5 GHz\n·28 V Operation\n·Suitable for linear and saturated applications;

Gallium Nitride 28V, 5W RF Power Transistor

·Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE, and Other Applications from DC to 6GHz\n·RoHS Compliant\n·High Reliability Gold Metallization Process\n·Low Cost, Surface Mount SOIC Package\n·15.5dB Power Gain\n·5W P3dB CW Power\n·100% RF Tested at 2500MHz\n·Subject to EAR99 Export Control\n·Lead-;

5W RF Power Transistor

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Gallium Nitride 28V, 5W, DC-6 GHz HEMT

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Next generation high power RF semiconductor technology

文件：12.93189 Mbytes Page：9 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HEMT N-CH 28V 5W DC-6GHZ 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 射频

DC-6 GHz HEMT

文件：2.27474 Mbytes Page：10 Pages

Next generation high power RF semiconductor technology

文件：12.93189 Mbytes Page：9 Pages

UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

文件：50.28 Kbytes Page：2 Pages

SENDUST TOROIDAL POWER INDUCTORS

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